PART |
Description |
Maker |
HYB18T256160A |
256 Mbi t DDR2 SDRAM
|
Infineon
|
HYB18T256160AFL-37 HYB18T256160A-3S HYB18T256160AF |
256 Mbi t DDR2 SDRAM
|
Infineon Technologies A...
|
48SD1616RPFK 48SD1616 48SD1616RPFE 48SD1616RPFH 48 |
256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
48SD3208 48SD3208RPFH 48SD3208RPFK 48SD3208RPFE 48 |
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
IC42S32800-6BI IC42S32800-7TI IC42S32800-7BG IC42S |
2M x 32 Bit x 4 Banks (256-MBIT) SDRAM 200万32位4个银行(256兆)内存
|
Central Semiconductor, Corp.
|
IS42S32800B-7T IS42S32800B-6T IS42S32800B-6BI IS42 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
IS42S32800B-6B IS42S32800B-6BLI IS42S32800B-6T IS4 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
IDT72V8980 IDT72V8980DB IDT72V8980J IDT72V8980PV I |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256 256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology IDT
|
CDP1822 CDP1822CD CDP1822CDX CDP1822CE CDP1822CEX |
256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, PDIP22 256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, CDIP22 From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
AM29LV256MH113R AM29LV256MH123R AM29LV256MH123RPGI |
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control CAP, FILM, 0.22UF, 100V, PPS, 2825,5%,SM 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 120 ns, PDSO56 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 256兆位6 M中的x 16-Bit/32 M中的x 8位)MirrorBitTM 3.0伏特,只有统一闪存部门与VersatileI /价外控制
|
Advanced Micro Devices, Inc.
|
HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 256k x 16 Bit FPM DRAM 3.3 V 70 ns From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|